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MOSFET AUTO -30V 1 P-CH HEXFET 20mOhms

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MOSFET AUTO -30V 1 P-CH HEXFET 20mOhms

Products specifications

Technology	Si
Pd - Power Dissipation	2.5 W
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	61 nC
Rds On - Drain-Source Resistance	35 mOhms
Qualification	AEC-Q101
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	10 A
Transistor Polarity	P-Channel
Number of Channels	1 Channel

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Products specifications

Technology	Si
Pd - Power Dissipation	2.5 W
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	61 nC
Rds On - Drain-Source Resistance	35 mOhms
Qualification	AEC-Q101
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	10 A
Transistor Polarity	P-Channel
Number of Channels	1 Channel