MOSFETs AUTO -100V 1 P-CH HEXFET 117mOhms
Lead Time: 0 Days
Products specifications
| Qg - Gate Charge | 64.7 nC |
| Pd - Power Dissipation | 140 W |
| Rds On - Drain-Source Resistance | 117 mOhms |
| Qualification | AEC-Q101 |
| Id - Continuous Drain Current | 23 A |
| Transistor Polarity | P-Channel |
| Packaging | Tube |
| Vgs - Gate-Source Voltage | 20 V |
| Configuration | Single |
| Mounting Style | Through Hole |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Technology | Si |
| Number of Channels | 1 Channel |