MOSFETs 40V Dual N Channel HEXFET
Lead Time: 0 Days
Products specifications
| Packaging | Cut Tape, MouseReel, Reel |
| Qg - Gate Charge | 22 nC |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Rds On - Drain-Source Resistance | 10 mOhms |
| Technology | Si |
| Configuration | Dual |
| Pd - Power Dissipation | 34 W |
| Vgs th - Gate-Source Threshold Voltage | 3.9 V |
| Maximum Operating Temperature | + 175 C |
| Number of Channels | 2 Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 43 A |