MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms
Products specifications
| Pd - Power Dissipation | 200 W |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Qg - Gate Charge | 113.3 nC |
| Configuration | Single |
| Packaging | Tube |
| Vgs - Gate-Source Voltage | 20 V |
| Id - Continuous Drain Current | 110 A |
| Technology | Si |
| Rds On - Drain-Source Resistance | 8 mOhms |
| Transistor Polarity | N-Channel |
| Qualification | AEC-Q101 |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |