MOSFETs AUTO 40V 1 N-CH HEXFET 1.7mOhms
Lead Time: 0 Days
Products specifications
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS | Details |
| Package/Case | TO-247-3 |
| Vds - Drain-Source Breakdown Voltage | 200 V, 40 V |
| Id - Continuous Drain Current | 130 A, 350 A |
| Rds On - Drain-Source Resistance | 9.7 mOhms, 1.7 mOhms |
| Vgs - Gate-Source Voltage | 30 V |
| Qg - Gate Charge | 161 nC, 220 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 520 W, 380 W |
| Channel Mode | Enhancement |
| Height | 20.7 mm |
| Length | 15.87 mm |
| Transistor Type | 1 N-Channel |
| Width | 5.31 mm |
| Brand | Infineon Technologies |
| Forward Transconductance - Min | 150 S |
| Fall Time | 74 ns |
| Product Type | MOSFET |
| Rise Time | 105 ns |
| Factory Pack Quantity | 400 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 64 ns |
| Typical Turn-On Delay Time | 41 ns |
| Part # Aliases | SP001572854 |
| Unit Weight | 38 g |
| Number of Channels | 1 Channel |
| Qualification | AEC-Q101 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Mounting Style | Through Hole |
| Packaging | Tube |