MOSFET Auto Q101 300V SGL N-CH HEXFET
Lead Time: 112 Days
Products specifications
| Packaging | Tube |
| Id - Continuous Drain Current | 38 A |
| Vds - Drain-Source Breakdown Voltage | 300 V |
| Rds On - Drain-Source Resistance | 56 mOhms |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Number of Channels | 1 Channel |
| Qualification | AEC-Q101 |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 341 W |
| Qg - Gate Charge | 83 nC |
| Technology | Si |
| Configuration | Single |
| Vgs - Gate-Source Voltage | 20 V |