MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms
Products specifications
| Qg - Gate Charge | 63 nC |
| Technology | Si |
| Id - Continuous Drain Current | 91 A |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 140 W |
| Rds On - Drain-Source Resistance | 7.5 mOhms |
| Configuration | Single |
| Packaging | Cut Tape, MouseReel, Reel |
| Transistor Polarity | N-Channel |
| Qualification | AEC-Q101 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Vgs - Gate-Source Voltage | 20 V |