MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
Products specifications
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 46 nC |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Configuration | Single |
| Pd - Power Dissipation | 110 W |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 8.4 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Packaging | Cut Tape, MouseReel, Reel |
| Id - Continuous Drain Current | 79 A |