MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms
Products specifications
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Technology | Si |
| Pd - Power Dissipation | 110 W |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 16 mOhms |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 53 A |
| Configuration | Single |
| Qualification | AEC-Q101 |
| Vgs - Gate-Source Voltage | 20 V |
| Packaging | Tube |
| Qg - Gate Charge | 50 nC |