MOSFETs AUTO -55V 1 P-CH HEXFET 65mOhms
Lead Time: 0 Days
Products specifications
| Technology | Si |
| Pd - Power Dissipation | 110 W |
| Rds On - Drain-Source Resistance | 65 mOhms |
| Qualification | AEC-Q101 |
| Configuration | Single |
| Packaging | Cut Tape, MouseReel, Reel |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Vgs - Gate-Source Voltage | 20 V |
| Id - Continuous Drain Current | 3.1 A |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Channel Mode | Enhancement |
| Number of Channels | 1 Channel |