MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms
Products specifications
| Qg - Gate Charge | 21.3 nC |
| Configuration | Single |
| Pd - Power Dissipation | 57 W |
| Packaging | Tube |
| Id - Continuous Drain Current | 18 A |
| Vgs - Gate-Source Voltage | 20 V |
| Qualification | AEC-Q101 |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Minimum Operating Temperature | - 55 C |
| Rds On - Drain-Source Resistance | 110 mOhms |
| Channel Mode | Enhancement |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |