MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms
Lead Time: 369 Days
Products specifications
| Transistor Polarity | P-Channel |
| Id - Continuous Drain Current | 13 A |
| Packaging | Tube |
| Qualification | AEC-Q101 |
| Technology | Si |
| Rds On - Drain-Source Resistance | 580 mOhms |
| Pd - Power Dissipation | 110 W |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 44 nC |
| Configuration | Single |
| Number of Channels | 1 Channel |