MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms
Products specifications
| Packaging | Tube |
| Technology | Si |
| Qg - Gate Charge | 12.7 nC |
| Transistor Polarity | P-Channel |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 175 mOhms |
| Qualification | AEC-Q101 |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 20 V |
| Pd - Power Dissipation | 38 W |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 11 A |