MOSFET 75V 170A 4.1 mOhm Automotive MOSFET
Products specifications
| Pd - Power Dissipation | 300 W |
| Minimum Operating Temperature | - 55 C |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Id - Continuous Drain Current | 170 A |
| Channel Mode | Enhancement |
| Configuration | Single |
| Qg - Gate Charge | 120 nC |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Maximum Operating Temperature | + 175 C |
| Rds On - Drain-Source Resistance | 3.3 mOhms |
| Packaging | Tube |
| Technology | Si |
| Qualification | AEC-Q101 |
| Vgs th - Gate-Source Threshold Voltage | 4 V |