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MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET

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MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET

Products specifications

Technology	Si
Packaging	Tube
Qualification	AEC-Q101
Id - Continuous Drain Current	160 A
Rds On - Drain-Source Resistance	4.2 mOhms
Qg - Gate Charge	85 nC
Pd - Power Dissipation	230 W
Vds - Drain-Source Breakdown Voltage	60 V
Configuration	Single
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Technology	Si
Packaging	Tube
Qualification	AEC-Q101
Id - Continuous Drain Current	160 A
Rds On - Drain-Source Resistance	4.2 mOhms
Qg - Gate Charge	85 nC
Pd - Power Dissipation	230 W
Vds - Drain-Source Breakdown Voltage	60 V
Configuration	Single
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel