MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms
Products specifications
| Technology | Si |
| Qualification | AEC-Q101 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Qg - Gate Charge | 22 nC |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 71 W |
| Id - Continuous Drain Current | 43 A |
| Transistor Polarity | N-Channel |
| Packaging | Tube |
| Rds On - Drain-Source Resistance | 15.8 mOhms |
| Configuration | Single |