MOSFETs 100V 190A 4 mOhm Automotive MOSFET
Products specifications
| Technology | Si |
| Id - Continuous Drain Current | 180 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Pd - Power Dissipation | 375 W |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 3.9 mOhms |
| Qualification | AEC-Q101 |
| Packaging | Tube |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 175 C |
| Qg - Gate Charge | 143 nC |