MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms
Products specifications
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Qualification | AEC-Q101 |
| Technology | Si |
| Vgs - Gate-Source Voltage | 20 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Maximum Operating Temperature | + 175 C |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Pd - Power Dissipation | 92 W |
| Configuration | Single |
| Id - Continuous Drain Current | 57 A |
| Qg - Gate Charge | 43 nC |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 12 mOhms |