MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms
Lead Time: 0 Days
Products specifications
| Packaging | Tube |
| Channel Mode | Enhancement |
| Qg - Gate Charge | 29 nC |
| Number of Channels | 1 Channel |
| Technology | Si |
| Pd - Power Dissipation | 80 W |
| Rds On - Drain-Source Resistance | 13.9 mOhms |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 51 A |
| Qualification | AEC-Q101 |
| Vgs - Gate-Source Voltage | 20 V |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 55 V |