IGBT Transistors DISCRETES
Products specifications
| Pd - Power Dissipation | 625 W |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Collector-Emitter Saturation Voltage | 3 V |
| Continuous Collector Current at 25 C | 62 A |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Mounting Style | Through Hole |
| Qualification | AEC-Q101 |
| Packaging | Tube |
| Technology | Si |