MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
Products specifications
| Configuration | Single |
| Qg - Gate Charge | 75 nC |
| Mounting Style | Through Hole |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Minimum Operating Temperature | - 55 C |
| Packaging | Tube |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Number of Channels | 1 Channel |
| Vgs - Gate-Source Voltage | 16 V |
| Pd - Power Dissipation | 200 W |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 180 A |
| Rds On - Drain-Source Resistance | 5.9 mOhms |