MOSFETs 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms
Products specifications
| Channel Mode | Enhancement |
| Qg - Gate Charge | 22 nC |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 41 W |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Configuration | Single |
| Vgs - Gate-Source Voltage | 16 V |
| Technology | Si |
| Packaging | Cut Tape, MouseReel, Reel |
| Rds On - Drain-Source Resistance | 10.5 mOhms |
| Id - Continuous Drain Current | 58 A |
| Transistor Polarity | N-Channel |
| Qualification | AEC-Q101 |
| Minimum Operating Temperature | - 55 C |