MOSFETs 40V AUTOGRADE 1 N-CH HEXFET 3mOhms
Products specifications
| Rds On - Drain-Source Resistance | 4.3 mOhms |
| Id - Continuous Drain Current | 112 A |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 63 W |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 16 V |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Channel Mode | Enhancement |
| Packaging | Cut Tape, MouseReel, Reel |
| Qg - Gate Charge | 52 nC |
| Technology | Si |
| Qualification | AEC-Q101 |