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MOSFET 55V Logic Level 3.1A 65 mOhm Auto MOSFET

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MOSFET 55V Logic Level 3.1A 65 mOhm Auto MOSFET

Products specifications

Qg - Gate Charge	10.4 nC
Qualification	AEC-Q101
Technology	Si
Rds On - Drain-Source Resistance	65 mOhms
Id - Continuous Drain Current	4.4 A
Vds - Drain-Source Breakdown Voltage	55 V
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.1 W
Transistor Polarity	N-Channel

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Products specifications

Qg - Gate Charge	10.4 nC
Qualification	AEC-Q101
Technology	Si
Rds On - Drain-Source Resistance	65 mOhms
Id - Continuous Drain Current	4.4 A
Vds - Drain-Source Breakdown Voltage	55 V
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.1 W
Transistor Polarity	N-Channel