MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms
Products specifications
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 16 V |
| Minimum Operating Temperature | - 55 C |
| Qualification | AEC-Q101 |
| Packaging | Tube |
| Rds On - Drain-Source Resistance | 65 mOhms |
| Channel Mode | Enhancement |
| Configuration | Single |
| Pd - Power Dissipation | 45 W |
| Qg - Gate Charge | 10 nC |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 23 A |