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MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms

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MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms

Products specifications

Vgs - Gate-Source Voltage	16 V
Rds On - Drain-Source Resistance	6.5 mOhms
Pd - Power Dissipation	140 W
Qualification	AEC-Q101
Technology	Si
Transistor Polarity	N-Channel
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	130 A
Number of Channels	1 Channel
Qg - Gate Charge	40 nC
Configuration	Single

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Products specifications

Vgs - Gate-Source Voltage	16 V
Rds On - Drain-Source Resistance	6.5 mOhms
Pd - Power Dissipation	140 W
Qualification	AEC-Q101
Technology	Si
Transistor Polarity	N-Channel
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	130 A
Number of Channels	1 Channel
Qg - Gate Charge	40 nC
Configuration	Single