MOSFETs AUTO 100V 1 N-CH HEXFET 105mOhms
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Configuration | Single |
| Technology | Si |
| Packaging | Tube |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 155 mOhms |
| Qg - Gate Charge | 22.7 nC |
| Vgs - Gate-Source Voltage | 16 V |
| Pd - Power Dissipation | 79 W |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 17 A |