MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
Lead Time: 182 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Qualification | AEC-Q101 |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 33 nC |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 99 A |
| Packaging | Tube |
| Configuration | Single |
| Pd - Power Dissipation | 143 W |
| Vgs - Gate-Source Voltage | 16 V |
| Rds On - Drain-Source Resistance | 8.3 mOhms |