MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET
Products specifications
| Qualification | AEC-Q101 |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 343 A |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| Pd - Power Dissipation | 375 W |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Packaging | Reel |