AUIRLS4030-7P

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MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET

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MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET

Products specifications

Vgs - Gate-Source Voltage	16 V
Qualification	AEC-Q101
Qg - Gate Charge	93 nC
Technology	Si
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	3.2 mOhms
Id - Continuous Drain Current	190 A
Transistor Polarity	N-Channel
Pd - Power Dissipation	370 W
Maximum Operating Temperature	+ 175 C

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Products specifications

Vgs - Gate-Source Voltage	16 V
Qualification	AEC-Q101
Qg - Gate Charge	93 nC
Technology	Si
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	3.2 mOhms
Id - Continuous Drain Current	190 A
Transistor Polarity	N-Channel
Pd - Power Dissipation	370 W
Maximum Operating Temperature	+ 175 C