IRF540NSTRRPBF

MOSFETs 100V 1 N-CH HEXFET 44mOhms 47.3nC
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SKU: IRF540NSTRRPBF

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R 55.37

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R 36.14

R 25.48

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MOSFETs 100V 1 N-CH HEXFET 44mOhms 47.3nC
Lead Time: 0 Days

Products specifications

Rds On - Drain-Source Resistance	44 mOhms
Technology	Si
Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	33 A
Transistor Polarity	N-Channel
Configuration	Single
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	47.3 nC
Pd - Power Dissipation	3.8 W
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	20 V

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Products specifications

Rds On - Drain-Source Resistance	44 mOhms
Technology	Si
Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	33 A
Transistor Polarity	N-Channel
Configuration	Single
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	47.3 nC
Pd - Power Dissipation	3.8 W
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	20 V

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