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IGBT Transistors 600V UltraFast 8-60kHz

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IGBT Transistors 600V UltraFast 8-60kHz

Products specifications

Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	600 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Packaging	Tube
Collector-Emitter Saturation Voltage	2.1 V
Continuous Collector Current at 25 C	13 A
Technology	Si
Pd - Power Dissipation	60 W

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Products specifications

Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	600 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Packaging	Tube
Collector-Emitter Saturation Voltage	2.1 V
Continuous Collector Current at 25 C	13 A
Technology	Si
Pd - Power Dissipation	60 W