IRG4BC40W-SPBF

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IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT

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IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT

Products specifications

Continuous Collector Current at 25 C	40 A
Configuration	Single
Collector-Emitter Saturation Voltage	2.05 V
Collector- Emitter Voltage VCEO Max	600 V
Technology	Si
Packaging	Tube
Pd - Power Dissipation	160 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Continuous Collector Current at 25 C	40 A
Configuration	Single
Collector-Emitter Saturation Voltage	2.05 V
Collector- Emitter Voltage VCEO Max	600 V
Technology	Si
Packaging	Tube
Pd - Power Dissipation	160 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C