IRG4BC40WPBF

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IGBT Transistors 600V Warp 60-150kHz

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IGBT Transistors 600V Warp 60-150kHz

Products specifications

Configuration	Single
Technology	Si
Pd - Power Dissipation	160 W
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Packaging	Tube
Continuous Collector Current at 25 C	40 A
Collector-Emitter Saturation Voltage	2.5 V
Collector- Emitter Voltage VCEO Max	600 V

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Products specifications

Configuration	Single
Technology	Si
Pd - Power Dissipation	160 W
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Packaging	Tube
Continuous Collector Current at 25 C	40 A
Collector-Emitter Saturation Voltage	2.5 V
Collector- Emitter Voltage VCEO Max	600 V