IRG4PC40SPBF

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IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT

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IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT

Products specifications

Packaging	Tube
Pd - Power Dissipation	160 W
Technology	Si
Continuous Collector Current at 25 C	60 A
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	1.5 V
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Packaging	Tube
Pd - Power Dissipation	160 W
Technology	Si
Continuous Collector Current at 25 C	60 A
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	1.5 V
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C