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IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT

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IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT

Products specifications

Collector- Emitter Voltage VCEO Max	1.2 kV
Continuous Collector Current at 25 C	20 A
Technology	Si
Collector-Emitter Saturation Voltage	3.1 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Pd - Power Dissipation	100 W
Configuration	Single
Packaging	Tube

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Products specifications

Collector- Emitter Voltage VCEO Max	1.2 kV
Continuous Collector Current at 25 C	20 A
Technology	Si
Collector-Emitter Saturation Voltage	3.1 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Pd - Power Dissipation	100 W
Configuration	Single
Packaging	Tube