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IGBT Transistors 1200V UltraFast 5-40kHz

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IGBT Transistors 1200V UltraFast 5-40kHz

Products specifications

Collector- Emitter Voltage VCEO Max	1.2 kV
Packaging	Tube
Collector-Emitter Saturation Voltage	2.43 V
Technology	Si
Continuous Collector Current at 25 C	41 A
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	160 W
Configuration	Single

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Products specifications

Collector- Emitter Voltage VCEO Max	1.2 kV
Packaging	Tube
Collector-Emitter Saturation Voltage	2.43 V
Technology	Si
Continuous Collector Current at 25 C	41 A
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	160 W
Configuration	Single