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IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT

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IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT

Products specifications

Technology	Si
Pd - Power Dissipation	200 W
Mounting Style	Through Hole
Continuous Collector Current at 25 C	45 A
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	1.2 kV
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Configuration	Single
Collector-Emitter Saturation Voltage	3.7 V

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Products specifications

Technology	Si
Pd - Power Dissipation	200 W
Mounting Style	Through Hole
Continuous Collector Current at 25 C	45 A
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	1.2 kV
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Configuration	Single
Collector-Emitter Saturation Voltage	3.7 V