IGBT Transistors IGBT DISCRETES
Products specifications
| Pd - Power Dissipation | 160 W |
| Packaging | Tube |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Continuous Collector Current at 25 C | 70 A |
| Technology | Si |
| Mounting Style | Through Hole |
| Collector-Emitter Saturation Voltage | 1.69 V |
| Collector- Emitter Voltage VCEO Max | 330 V |