IGBT Transistors IGBT DISCRETES
Products specifications
| Collector-Emitter Saturation Voltage | 2.2 V |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 50 A |
| Pd - Power Dissipation | 180 W |
| Packaging | Tube |
| Technology | Si |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |