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IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A

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IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A

Products specifications

Packaging	Tube
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	1.2 kV
Technology	Si
Configuration	Single
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	1.9 V
Pd - Power Dissipation	180 W
Maximum Operating Temperature	+ 150 C
Continuous Collector Current at 25 C	50 A

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Products specifications

Packaging	Tube
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	1.2 kV
Technology	Si
Configuration	Single
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	1.9 V
Pd - Power Dissipation	180 W
Maximum Operating Temperature	+ 150 C
Continuous Collector Current at 25 C	50 A