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IGBT Transistors 1200V Trench IGBT Generic Ind App

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IGBT Transistors 1200V Trench IGBT Generic Ind App

Products specifications

Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2 V
Collector- Emitter Voltage VCEO Max	1.2 kV
Configuration	Single
Continuous Collector Current at 25 C	85 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	320 W
Technology	Si
Packaging	Tube

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Products specifications

Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2 V
Collector- Emitter Voltage VCEO Max	1.2 kV
Configuration	Single
Continuous Collector Current at 25 C	85 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	320 W
Technology	Si
Packaging	Tube