IGBT Transistors 430V LO-VCEON DISCRETE IGBT
Products specifications
| Technology | Si |
| Collector-Emitter Saturation Voltage | 1.4 V |
| Configuration | Single |
| Pd - Power Dissipation | 125 W |
| Minimum Operating Temperature | - 40 C |
| Maximum Gate Emitter Voltage | 10 V |
| Continuous Collector Current at 25 C | 20 A |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 430 V |
| Mounting Style | Through Hole |
| Maximum Operating Temperature | + 150 C |