IRGIB10B60KD1P

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IGBT Transistors 600V Low-Vceon

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IGBT Transistors 600V Low-Vceon

Products specifications

Collector-Emitter Saturation Voltage	2.1 V
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Packaging	Tube
Pd - Power Dissipation	44 W
Minimum Operating Temperature	- 55 C
Technology	Si
Continuous Collector Current at 25 C	16 A
Mounting Style	Through Hole

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Products specifications

Collector-Emitter Saturation Voltage	2.1 V
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Packaging	Tube
Pd - Power Dissipation	44 W
Minimum Operating Temperature	- 55 C
Technology	Si
Continuous Collector Current at 25 C	16 A
Mounting Style	Through Hole