IRGIB6B60KDPBF

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IGBT Transistors 600V Low-Vceon

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IGBT Transistors 600V Low-Vceon

Products specifications

Technology	Si
Series	RC
Continuous Collector Current at 25 C	11 A
Pd - Power Dissipation	38 W
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Packaging	Tube
Collector-Emitter Saturation Voltage	1.8 V
Collector- Emitter Voltage VCEO Max	600 V

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Products specifications

Technology	Si
Series	RC
Continuous Collector Current at 25 C	11 A
Pd - Power Dissipation	38 W
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Packaging	Tube
Collector-Emitter Saturation Voltage	1.8 V
Collector- Emitter Voltage VCEO Max	600 V