IRGP35B60PDPBF

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IGBT Transistors 600V Warp2 150kHz

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IGBT Transistors 600V Warp2 150kHz

Products specifications

Collector-Emitter Saturation Voltage	1.85 V
Configuration	Single
Mounting Style	Through Hole
Pd - Power Dissipation	308 W
Collector- Emitter Voltage VCEO Max	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Packaging	Tube
Continuous Collector Current at 25 C	60 A

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Products specifications

Collector-Emitter Saturation Voltage	1.85 V
Configuration	Single
Mounting Style	Through Hole
Pd - Power Dissipation	308 W
Collector- Emitter Voltage VCEO Max	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Packaging	Tube
Continuous Collector Current at 25 C	60 A