IRGP4062DPBF

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IGBT Transistors 600V UltraFast Trench IGBT

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IGBT Transistors 600V UltraFast Trench IGBT

Products specifications

Collector- Emitter Voltage VCEO Max	600 V
Packaging	Tube
Configuration	Single
Pd - Power Dissipation	250 W
Collector-Emitter Saturation Voltage	1.95 V
Technology	Si
Continuous Collector Current at 25 C	48 A
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C

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Products specifications

Collector- Emitter Voltage VCEO Max	600 V
Packaging	Tube
Configuration	Single
Pd - Power Dissipation	250 W
Collector-Emitter Saturation Voltage	1.95 V
Technology	Si
Continuous Collector Current at 25 C	48 A
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C