IGBT Transistors 600V UltraFast Trench IGBT
Products specifications
| Collector- Emitter Voltage VCEO Max | 600 V |
| Technology | Si |
| Mounting Style | Through Hole |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 454 W |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Packaging | Tube |
| Continuous Collector Current at 25 C | 140 A |