IRGP4069D-EPBF

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IGBT Transistors 600V Low VCEon Trench IGBT

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IGBT Transistors 600V Low VCEon Trench IGBT

Products specifications

Technology	Si
Continuous Collector Current at 25 C	76 A
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	1.85 V
Packaging	Tube
Maximum Gate Emitter Voltage	20 V
Pd - Power Dissipation	268 W
Collector- Emitter Voltage VCEO Max	600 V

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Products specifications

Technology	Si
Continuous Collector Current at 25 C	76 A
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	1.85 V
Packaging	Tube
Maximum Gate Emitter Voltage	20 V
Pd - Power Dissipation	268 W
Collector- Emitter Voltage VCEO Max	600 V