Bipolar Transistors - BJT NPN TRANSISTOR
Products specifications
| Collector-Emitter Saturation Voltage | 300 mV |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 200 C |
| Transistor Polarity | NPN |
| Maximum DC Collector Current | 800 mA |
| Emitter- Base Voltage VEBO | 6 V |
| Technology | Si |
| Collector- Base Voltage VCBO | 75 V |
| Gain Bandwidth Product fT | 300 MHz |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Single |